Author: Dave Fang

Surface topology of amorphous silicon films deposited at different substrate biases

We have always speculated that applying a substrate bias during the silicon deposition “smooths” the film by creating a nicer film. With Graham’s help, I took a few AFM scans of films deposited at three different biases: 00, 05, and

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30 nm pnc-Si bias series

We have already established that bias is an important parameter in controlling the morphology of 15 nm thick pnc-Si, but have yet to look at its effect on thicker films. This week, made a few 30 nm thick Si films

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Pore formation theory

In this post, I will present my thoughts on the possible mechanisms of pore formation based on our most recent observations with the substrate bias experiments. As a precursor, I will discuss silicon crystallization since it is intimately related to

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Bias series continued

This is a continuation of the silicon substrate bias series. I have added several more data points to highlight the trend. Below are the TEM micrographs, pore distributions, average diameter/porosity/density plots. It would appear that the “optimal” bias is at

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Energy needed for pore nucleation and growth

I first wrote about quantifying the pore formation process using kinetic theory last year. In this post, I will develop my thoughts a bit more. In the literature, researchers oftentimes present charts, like the two shown below, describing the Arrhenius

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High porosity film reproduced

I reported last week that a 15 nm silicon film deposited with 05 W substrate bias yielded a highly porous film. This week, I wanted to confirm this effect as well as compare it to films deposited at 10 W

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Record porosity and size in 15 nm pnc-Si

As a continuation of the substrate bias series, I deposited a 15 nm film with 05 W substrate bias and annealed at 1000 C. TEM shows that this condition generates a 13.4% porosity and a max pore size of ~40

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Young's modulus and residual stress of pnc-Si deposited with different substrate biases

Last week, I reported on the the morphology of pnc-Si deposited with different substrate biases. We hypothesized that the reason for this was due to the different initial film stress of the as-deposited a-Si. Unfortunately, the pressure-displacement method does not

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Silicon substrate bias series

We have always speculated that the substrate bias during the a-Si deposition had a strong effect on pore morphology of pnc-Si. Here, I looked at three 15 nm silicon films deposited with 00W, 25W, and 50W substrate bias. Recall, that

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Protein through carbonized pnc-Si

In an attempt to address the Nano Letters reviewer’s comment (show molecular separation, not just Au), I ran a simple experiment where I tried to pass BSA, Cyt. C, IgG, and β-galactosidase through carbonized membranes in the pressure cell. We have

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