Author: Karl Reisig

W415-T and W416-T: Air Permeability and Burst Pressures

I recently tested intact samples from W415-T and W416-T. All samples from W415-T were completely intact except the one located 3.167 units from center, which had one medium pinhole. All samples from W416-T were intact, but a few had irregular

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Cell Labeling on Si

Below is an image of HUVEC grown on RTP treated W303 for 72 hours. The cells were seeded at high density and therefore reached confluence prior to day 3. The first row shows the membrane area of the sample; the

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Wafers 398 and 418: Burst Pressure

Transferred from other blog… Wafers 398 and 418 were recently tested for burst pressure. Wafer 398 had a burst pressure range of 4.28-8.24 psi, with the great majority of intact membranes on the wafer having no or one tiny pinhole.

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