Author: Josh Winans
Josh is a postdoc in the McGrath lab working on disruptive membrane technologies.

Substrate bias

We wanted to test the effects of changing the substrate bias during the Si deposition step similar to what Dave Fang had done so many years ago.  Attached is a couple of plots showing the effect of varying substrate bias

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Pores in 60 nm pnc-Si

We deposited a 20/60/20 nm OSO stack for an ellipsometry test.  We decided to try annealing the un-patterned wafer in the RTP at 1050 C with no susceptor with a 100 C/s ramp for 60 s. The attached SEM images

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SEM x-section of 30-50-30 NSN showing increased thickness after RTP

This is a continuation of earlier work showing 30-100-30 NSN x-sections where the Si layer thickness increases from ~92 nm before RTP to ~130 nm after RTP. Below are SEMs showing a ~50 nm thick a-Si film becoming a ~62 nm

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SEMs of burst 30-50-30 NSN SEPCON

Below are some SEM images of a burst 30-50-30 NSN membrane in a SEPCON pattern.  Many similar chips failed at lower pressures, but this one survived to ~5-7 psi.  (didn’t keep close track of the chips after they were burst,

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Burst Pressure, Permeance of NSN pnc-Si SEPCONS with large pores

Karl, Charles and I measured the burst pressure and permeance of some 30-50-30 and 30-100-30 NSN. Burst Pressure: The SEPCONs readily burst at pressures under 1 psi when the flow was directed from the backside of the chip through the

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NSN SEPCONs

Still trying to reproduce Joe’s large pore material on SEPCONs using NSN stacks.  This post has data from two wafers with 30/50/30 and 30/100/30 NSN.  RTP is 1000C 50C/s for 1min.  Nitride is etched off by placing samples in 50%

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More details on INT cartridge's "desalting" column

First things first, the desalting column is not intended to desalt.  Apparently that’s just an old name that has carried over.  The current purpose is to separate viruses from large debris after sonication. The sample in a buffer solution will

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Update: 30/100/30 OSO, 30/75/30 & 30/100/30 NSN SEPCON

We are trying to reproduce the very small pores Joe created with 30/100/30 OSO and large pores created with 30/100/30 NSN using a SEPCON pattern.  (Joe’s previous post.) We had a problem with several chips releasing from the center of

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New Cartridge from INT

INT received the first samples of their new cartridge design.  The following slides were given to us by INT to provide some detail. The shorter cylinder on the left that is called the “glass bead pod” needs on filter fixed

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Mtg with INT

Karl and I went to INT to meet with Mike Connolly and Rick Murante for preliminary discussions on the PFI project.  Our role as proposed in the grant is to provide membranes capable of eliminating false positives by using ~20nm

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