Category: NRG

Nano-porous SiN Lift-off Update

Using the same successful procedure as the last lift-off attempt, another large piece of membrane lifted off. This came from the same wafer, but confirms that 30 minutes in BOE is sufficient to etch 25 nm of thermal oxide under

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SEM Images of Barcikowski Samples

With Joe’s help, I was able to take some SEM images of the samples that I performed my previous set of separation experiments on. Sample 1: The obvious aggregation in this sample (exemplified by the ‘victory eagle’ blot in the

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Mtg with INT

Karl and I went to INT to meet with Mike Connolly and Rick Murante for preliminary discussions on the PFI project.  Our role as proposed in the grant is to provide membranes capable of eliminating false positives by using ~20nm

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Multiple Chips packaging Concept

While my focus will be on packaging a single multi-channel chip device, I have captured here an initial concept for packaging multiple channels. The technique required is the application of verticle PDMS structures to direct blood and dialysate to and

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TEER Measurements First Attempt

After integrating my thin film electrodes into the layer stack of the BBB device, I want to make some TEER measurements.       I stripped off the well-plate attachment off of the TEER tool, exposing the individual leads. To

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Nano-porous SiN Lift-off with SU8 3010 Negative Resist

Using a wafer with a stack of Si-25nm(thermOx)-40nm(SiN)-50nm(PNCSi), lift-off was achieved on a small scale. First the SiN was etched using the standard process Simpore has developed, this also removed most/all of the PNCSi. The standard uChem process was then

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100nm thick pnc-Si membrane

From the past experiments we know that it is not easy to form pores in thicker silicon layer. It is mainly because that higher energy is required to form open holes in a thicker silicon film. Dave showed us less

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Feasability of SU8 3010 Negative Resist for Lift-off.

SU-8 3010 (MicroChem) was chosen for its improved adhesion strength, and reduced stress. MicroChem also provides a datasheet on the usage of this negative resist that was followed as a baseline. For Post Exposure Bake (PEB) two methods were implemented,

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Making Slot Devices in URNano facility

The schematic of the slot device is shown below. The main support structure is the pnc-Si membrane with Au or Ag metal on both sides. There is a conformal covering of Alumina shown in blue in the figure which actually

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Filtrate Concentration of the Barcikowski Particles Remain Discouragingly Low Despite Larger Sepcons and Higher Salt Concentrations

Because the Barcikowski lab intends to use the nanoparticles they sent us, relatively high yields are necessary for any step that cleans them up. This is unfortunate, because in every single separation that we’ve done (with one exception mentioned further

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